TC Shen

Publications | Book Chapters

• Shen, T., Cabrini, S., Kawata, S., (2011). New Emerging Techniques: Nanofabrication Handbook. Taylor and Francis/ CRC Press *
• Shen, T., Wang, C., Tucker, J.R, (1997). Atomic depassivation and metallization of the Si(100)-2x1:H surface: Atomic and molecular wires. Kluwer Academic

An asterisk (*) at the end of a publication indicates that it has not been peer-reviewed.

Publications | Journal Articles

Academic Journal

• Lange, C.M, Shen, T., (2021). Fabrication of height-modulated carbon nanotube forests: morphologies and prospects for broadband absorption. Carbon Trends, 4, 100070. doi: doi.org/10.1016/j.cartre.2021.100070
• Shen, T., Zhou, Z., Anderson, C.M, Thompson, S.K, Whitty, K.J, Stowers, K.J, (2018). Synthesis of high-specific volume carbon nanotube structures for gas-phase applications. Diamond & Related Materials, 88, 230.
• Zhou, Z., Anderson, C.M, Butler, S.K, Thompson, S.K, Whitty, K.J, Shen, T., Stowers, K.J, (2017). Stability and efficiency of CO2 capture using linear amine polymer modified carbon nanotubes. Journal of Materials Chemistry, 5, 10486-10494.
• Wood, B.D, Dyer, J.S, Thurgood, V.A, Tomline, N.A, Lehman, J.H, Shen, T., (2015). Optical Reflection and Absorption of Carbon Nanotube Forest Films on Substrates. Journal of Applied Physics, 118, 013106.
• Ji, J., Shen, T., (2007). A scanning tunneling microscopy study of PH3 adsorption on Si(111)-7x7 surfaces, P-segregation and thermal desorption. surface science, 601, 1768.
• Ji, J., Shen, T., (2007). A scanning tunneling microscopy study of PH3 adsorption on Si(111)‐ 7x7 surfaces, P‐segregation and thermal desorption. Surface Science, 601
• Robinson, S.J, Perkins, C.L, Shen, T., Tucker, J.R, Schenkel, T., Wang, X.W, Ma, T.P, (2007). Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams. Appl. Phys. Lett., 91, 122105.
• Robinson, S.J, Kline, J.S, Wheelwright, H.J, Tucker, J.R, Yang, C.L, Du, R.R, Volland, B.E, Rangelow, I.W, Shen, T., (2006). Electron transport in laterally confined phosphorus δ-layers in silicon. Phys. Rev. B, 74, 153311.
• Ji, J., Shen, T., (2004). Low Temperature Silicon Epitaxy on Hydrogen Terminated Si(100) Surfaces. Phys. Rev. B, 70, 115309.
• Shen, T., Kline, J.S, Schenkel, T., Robinson, S.J, Ji, J., Yang, C.L, Du, R.R, Tucker, J.R, (2004). Nanoscale electronics based on 2D dopant patterns in silicon. J. Vac. Sci. Technol. B, 22, 3182.
• Tucker, J.R, Shen, T., (2004). The road to a quantum computer. Quantum Information Process, 3, 105.
• Kim, J.C, Ji, J., Kline, J.S, Tucker, J.R, Shen, T., (2003). Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing. Appl. Surf. Sci., 220, 293.
• Kim, J.C, Ji, J., Kline, J.S, Tucker, J.R, Shen, T., (2003). The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(001). Surf. Sci., 538, L471.
• Shen, T., Ji, J., Zudov, M.A, Du, R., Kline, J.S, Tucker, J.R, (2002). Ultra-dense phosphorous delta-layer grown into silicon from PH3 molecular precursors. Appl. Phys. Lett., 80, 1580-1582.
• Tucker, J.R, Shen, T., (2001). Fabricating an all-epitaxial quantum computer. Quantum Information Computation , 1, 129-133.
• Tucker, J.R, Shen, T., (2000). Can Single-Electron Integrated Circuits and Quantum Computers be Fabricated in Silicon?. International Journal of Circuit Theory and Applications, 28, 553.
• Shen, T., Steckel, J.A, Jordan, K.D, (2000). Electron-stimulated bond rearrangements on the H/Si(100)-3x1 surface. Surface Science, 446, 211.
• Shen, T., (2000). Role of scanning probes in nanoelectronics: a critical review. Surface Review and Letters, 7, 683.
• Shen, T., Wang, C., Rucker, J.R, (1999). The initial stage of nucleation and growth of Al on H/Si(100)-1x1 by dimethylaluminum hydride vapor deposition. Applied Surface Science, 141, 228.
• Tucker, J.R, Shen, T., (1998). New approaches to silicon nanoelectronics. Future Electronics Device report , 9:supplement 2, 5.
• Tucker, J.R, Shen, T., (1998). Prospects for atomically ordered device structures based on STM lithography. Solid state electronics, 42, 1061.
• Tucker, J.R, Shen, T., (1998). Toward atom-scale silicon electronics. Journal of Surface Analysis, 3, 172.
• Shen, T., Wang, C., Tucker, J.R, (1997). Al nucleation on monohydride and bare Si(001) surfaces: atomic scale patterning. Physical Review Letters, 78, 1271-1274.
• Shen, T., Avouris, P., (1997). Electron stimulated desorption by scanning tunneling microscope. Surface Science, 390, 35.
• Shen, T., (1997). Nanofabrication on Silicon Surfaces by STM. Chemistry and Physics of Small Structures, 2, 56-58.
• Avouris, P., Walkup, R.E, Rossi, A.R, Akpati, H.C, Nordlander, P., Shen, T., Abeln, G.C, Lyding, J.W, (1996). Breaking individual chemical bonds via STM-induced excitations. Surface Science, 363, 368.
• Tucker, J.R, Wang, C., Shen, T., (1996). Metal silicide patterning: a new approach to silicon nanoelectronics. Nanotechnology, 7, 275.
• Lyding, J.W, Shen, T., Abeln, G.C, Wang, C., Tucker, J.R, (1996). Nanoscale patterning and selective chemistry of silicon surfaces by ultrahigh-vacuum scanning tunneling microscopy. Nanotechnology, 7, 128.
• Avouris, P., Walkup, R.E, Rossi, A.R, Shen, T., Abeln, G.C, Tucker, J.R, Lyding, J.W, (1996). STM-induced H atom desorption from Si(100): isotope effects and site selectivity. Chemical Physics Letters, 257, 148-154.
• Lyding, J.W, Shen, T., Abeln, G.C, Wang, C., Scott, P.A, Tucker, J.R, Avouris, P., Walkup, R.E, (1996). Ultrahigh vacuum scanning tunneling microscope-based nanolithography and selective chemistry on silicon surfaces. Israel Journal of Chemistry, 36, 3.
• Shen, T., Wang, C., Abeln, G.C, Tucker, J.R, Lyding, J.W, Avouris, P., Walkup, R.E, (1995). Atomic scale desorption through electronic and vibrational excitation mechanisms. Science, 268, 1590.
• Shen, T., Wang, C., Lyding, J.W, Tucker, J.R, (1995). Nanoscale oxide patterns on Si (100) surfaces,. Applied Physics Letters, 66, 976-978.
• Abeln, G.C, Shen, T., Tucker, J.R, Lyding, J.W, (1995). Nanoscale STM-patterning and chemical modification of the Si(100) surface. Microelectronic engineering, 27, 23.
• Shen, T., Wang, C., Lyding, J.W, Tucker, J.R, (1994). A STM study of surface reconstructions on Si(111):B. Physical Review B, 50, 7453-7460 .
• Lyding, J.W, Abeln, G.C, Shen, T., Wang, C., Tucker, J.R, (1994). Nanometer scale patterning and oxidation of silicon surfaces with an ultrahigh vacuum scanning tunneling microscope. Journal of Vacuum Science and Technology B, 12, 3735.
• Lyding, J.W, Shen, T., Hubacek, J.S, Tucker, J.R, Abeln, G.C, (1994). Nanoscale patterning and oxidation of H-passivated Si(100)-2x1 surfaces with an ultrahigh vacuum scanning tunneling microscope. Applied Physics Letters, 64, 2010.
• Huang, J.C, Shen, T., (1991). Chiral symmetry breaking in QED for weak coupling. Journal of Physics G, 17, 573.
• Shen, T., Brockenbrough, R.T, Tucker, J.R, Lyding, J.W, (1991). Ion irradiation effects on graphite with scanning tunneling microscope. Journal of Vacuum Science and Technology B, 9, 1376-1379 .
• Shen, T., (1989). On the possibility of gravitationally induced semi-classical vacuum decay. Physics Letters B, 220, 42-47.
• Shen, T., (1988). Bubbles without cores. Physical Review D, 37, 3537-3542 .
• Shen, T., Sobczyk, J., (1987). Higher-dimensional self-consistent solution with deformed internal spaces. Physical Review D, 36, 397.
• Shen, T., Hu, B.L, (1986). Weak angle from Kaluza-Klein theory with deformed internal space. Physics Letters B, 178, 373.
• Shen, T., Hu, B.L, O'Connor, D.J, (1985). Symmetry behavior of the static Taub universe: effect of curvature anisotropy. Physical Review D, 31, 2401.
• O'Connor, D.J, Hu, B.L, Shen, T., (1983). Symmetry behavior in the Einstein universe: effect of spacetime curvature and arbitrary field coupling. Physics Letters B, 130, 31.
• Call, R.W, Read, C.G, Mart, C., Shen, T., The Density Factor in the Synthesis of Carbon Nanotube Forest by Injection Chemical Vapor Deposition. journal of applied physics, 112, 124303.

An asterisk (*) at the end of a publication indicates that it has not been peer-reviewed.

Publications | Technical Reports

Research Reports

An asterisk (*) at the end of a publication indicates that it has not been peer-reviewed.

Publications | Other

An asterisk (*) at the end of a publication indicates that it has not been peer-reviewed.